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An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners.
A thyristor is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications.[1]: 12 It acts exclusively as a bistable switch (or a latch),[1]: 12 conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reverse-biased, or until the voltage is removed (by some other means).[1]: 12 There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls the larger current of the Anode to Cathode path.
In a two-lead thyristor, conduction begins when the potential difference between the Anode and Cathode themselves is sufficiently large (breakdown voltage).
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other.
A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals.[4] It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used
A TRIAC (triode for alternating current; also bidirectional triode thyristor or bilateral triode thyristor[1]) is a three terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericised trademark.
TRIACs are a subset of thyristors (analogous to a relay in that a small voltage and current can control a much larger voltage and current) and are related to silicon controlled rectifiers (SCRs). TRIACs differ from SCRs in that they allow current flow in both directions, whereas an SCR can only conduct current in a single direction. Most TRIACs can be triggered by applying either a positive or negative voltage to the gate (an SCR requires a positive voltage). Once triggered, SCRs and TRIACs continue to conduct, even if the gate current ceases, until the main current drops below a certain level called the holding current.
The DIAC (diode for alternating current) is a diode that conducts electrical current only after its breakover voltage, VBO, has been reached momentarily. Three, four, and five layer structures may be used.[1] Behavior is similar to the voltage breakdown of a triac without a gate terminal.
When breakdown occurs, internal positive feedback (impact ionization or two transistor feedback) ensures that the diode enters a region of negative dynamic resistance, leading to a sharp increase in current through the diode and a decrease in the voltage drop across it (typically full switch-on takes a few hundred nanoseconds to microseconds). The diode remains in conduction until the current through it drops below a value characteristic for the device, called the holding current, IH. Below this threshold, the diode switches back to its high-resistance, non-conducting state. This behavior is bi-directional, meaning typically the same for both directions of current.